Giant electrical modulation of magnetization in co40fe40b20/pb(mg1/3nb2/3)0. 7ti0. 3o3(011) heterostructure

ABSTRACT We report a giant electric-field control of magnetization (_M_) as well as magnetic anisotropy in a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) structure at room

temperature, in which a maximum relative magnetization change (Δ_M_/_M_) up to 83% with a 90° rotation of the easy axis under electric fields were observed by different magnetic measurement

systems with _in-situ_ electric fields. The mechanism for this giant magnetoelectric (ME) coupling can be understood as the combination of the ultra-high value of anisotropic in-plane

piezoelectric coefficients of (011)-cut PMN-PT due to ferroelectric polarization reorientation and the perfect soft ferromagnetism without magnetocrystalline anisotropy of CoFeB film.

Besides the giant electric-field control of magnetization and magnetic anisotropy, this work has also demonstrated the feasibility of reversible and deterministic magnetization reversal

controlled by pulsed electric fields with the assistance of a weak magnetic field, which is important for realizing strain-mediated magnetoelectric random access memories. SIMILAR CONTENT

BEING VIEWED BY OTHERS GIANT CONVERSE MAGNETOELECTRIC EFFECT IN A MULTIFERROIC HETEROSTRUCTURE WITH POLYCRYSTALLINE CO2FESI Article Open access 20 May 2022 DEMONSTRATION OF A

PSEUDO-MAGNETIZATION BASED SIMULTANEOUS WRITE AND READ OPERATION IN A CO60FE20B20/PB(MG1/3NB2/3)0.7TI0.3O3 HETEROSTRUCTURE Article Open access 01 July 2020 SIMULTANEOUSLY ACHIEVING GIANT

PIEZOELECTRICITY AND RECORD COERCIVE FIELD ENHANCEMENT IN RELAXOR-BASED FERROELECTRIC CRYSTALS Article Open access 04 May 2022 INTRODUCTION Recently, multiferroic materials or structures,

which simultaneously show two or more ferroic properties1,2 such as ferroelectricity and ferromagnetism/ferrimagnetism, have drawn much interest due to the magnetoelectric (ME) coupling

between the magnetic and ferroelectric (FE) orders and their potential applications in novel multi-functional devices3,4. Particularly, electric-field control of magnetism, known as the

converse ME effect5,6, has been extensively studied in multiferroic materials or structures, since it permits to manipulate magnetism by electric fields instead of magnetic fields or large

currents and provides an important access via electric-writing magnetic-reading for the next generation energy efficient memories7,8. To realize electric-field control of magnetization in

multiferroic materials or structures, there are mainly three optional approaches9,10. The first choice is using intrinsic ME coupling in single phase multiferroics. However, single phase

multiferroics are rather rare at room temperature and the converse ME effects are also typically too small to be useful2. It has been demonstrated that electric-field control of magnetism

can be achieved in CoFe/BiFeO3 structure via exchange coupling11,12, however, in-plane electric fields were applied, which intrinsically prohibits the high storage capacity for memories8.

The second choice is using electric field effect to induce the spin-polarized charge accumulation/dissipation at the interface, which results in a change in the interfacial magnetization13.

This remarkable charge-mediated ME effect was observed at low temperatures, which is disadvantageous for applications. The third choice is strain-mediated ME effect in the heterostructures

composed of ferromagnetic (FM) and FE materials through the transfer of piezostrain of the FE layer to the FM layer. Due to the vast choice of FE and FM materials, electric-field control of

magnetism has been widely achieved in FM/FE heterostructures at room temperature with remarkable converse ME effects5,14,15,16,17,18,19. Regarding the electric-field manipulation of

magnetism in multiferroic materials or structures, several factors are essential to realize electric-field-controlled magnetic random access memory. First of all, large magnetic response to

electric stimuli should be performed at room temperature and therefore the strain-mediated ME effects achieved in FM/FE multiferroic heterostructures become promising candidates8. In the

FM/FE multiferroic heterostructures, the reports related to macroscopic piezostrain-mediated electric field control of magnetization are many5,14,15,16,17,18,19, while work related to

electric field control of magnetic anisotropy involving ferroelectric polarization reorientation is still less, which may hinder people from further understanding the mechanism and improving

the ME effect in this system9. Secondly, directly electric-field control of magnetism with small or no magnetic field is more desirable. In most of the reports14,15,16, electric-field

control of magnetism was routinely achieved by measuring the magnetization-magnetic field (M-H) curves of the sample under different electric fields to show the converse ME effect. In this

measurement, large external magnetic field up to the saturate field was needed and therefore electric-field control of magnetism in terms of magnetization-electric field (M-E) curves with

small or no magnetic fields are more favorable17,18. Thirdly, reversible and deterministic reversal of magnetization is needed in magnetic recording. However, electric-field controlled 180°

reversal of magnetization in FM/FE heterostructures at room temperature is still limited12,19. Moreover, FM materials employed in the spin-dependent transport devices, with high spin

polarization and large magnetoresistance effect, are more preferred for ME coupling. Co40Fe40B20 possesses the highest spin polarization among the amorphous ferromagnetic Co-Fe-B alloys20

and has been demonstrated to achieve a very large tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs)21. On the other hand, FE single crystals such as lead magnesium

niobate - lead titanate Pb(Mg1/3Nb2/3)0.7Ti0.3O3 exhibits ultra-high piezoelectric behavior22 and has been reported to have a strong in-plane anisotropic piezostrain with electric fields

applied along the [011] crystalline direction in the (011)-cut case23,24. Therefore, the combination of CoFeB thin film and PMN-PT(011) single crystal is an ideal candidate for achieving

large ME effects and exploring the electric-field induced in-plane anisotropic piezostrain modulating on the magnetism of FM without magnetocrystalline anisotropy, which is important for

realizing strain-mediated magnetoelectric random access memory (SME-RAM)8. In this paper, we report a giant electrical modulation of magnetization in a CoFeB/PMN-PT FM/FE structure at room

temperature, with a maximum relative change Δ_M_/_M_ up to 83%, which is much larger than those in the previous reports17,18. Magnetic Optic Kerr Effect with a rotating field (Rot-MOKE) was

employed to investigate the magnetic anisotropy tuned by electric fields. Large magnetic anisotropy evolution with a 90° rotation of the easy axis above 5 kV/cm was observed due to the

electric-field-induced in-plane strain anisotropy with the involvement of ferroelectric polarization reorientation. Moreover, magnetization reversal by pulsed electric fields was realized

with the assistance of ±5 Oe magnetic fields, which is useful for magnetic recording devices. RESULTS The brief configuration of the CoFeB/PMN-PT heterostructure consists of a 20 nm

amorphous CoFeB film and a 0.2 mm (011)-cut PMN-PT single crystal as shown in Fig. 1(a) and the detailed fabricating processes are described in the _Methods__Section_. The sample edges (_x_,

_y_ and _z_) were cut along the pseudo-cubic [100], [01-1] and [011] lattice directions of PMN-PT as shown in Fig. 1(b). The spontaneous polarizations of PMN-PT with rhombohedral (R) phase

are along the <111> directions, i.e. the body diagonals of the pseudo-cubic unit cell in the (001)-cut case22. While in the (011)-cut case, the spontaneous polarizations lies along the

diagonals of the (011) and (01-1) plane as shown in Fig. 1(b). The transformation between (001)-cut case and (011)-cut case as well as the corresponding X-ray diffraction patterns can be

found in _Supplementary Information_ (Fig. S1). The purpose of choosing this (011)-cut PMN-PT wafer is that PMN-PT single-crystal has a strong in-plane anisotropic piezostrain when electric

field is applied along the [011] crystalline direction. The top view of the (011)-cut PMN-PT with spontaneous polarizations projecting on the (011) plane is shown in Fig. 1(c). When PMN-PT

wafer is poled along the [011] direction by a positive electric field, all of the eight possible polarization directions are switched downward with presence of only two of them, namely r1−

and r2− as shown in Fig. 1. This means r3/r4 also change to r1− and r2−. Larger electric fields rotate the polarizations r1−/r2− toward the [0-1-1] direction (to be r1′−/r2′−), leading to a

compressive strain along the [100] direction and an outstretched strain along the [01-1] direction as shown in Fig. 1(d). However, after removing the electric fields, all of the

polarizations restore to r1−/r2−. As a result, the [100] direction is a little bit elongated as shown in Fig. 1(e) compared to the initial state as shown in Fig. 1(c), because the

polarizations r3/r4 remain to be r1−/r2−. As reported in the literature23,24, the (011)-cut PMN-30%PT we used here has the optimized orientation and composition to achieve ultra-high

in-plane piezoelectric coefficients with _d_31 ~ −3100 pC/N along the [100] direction and _d_32 ~ 1400 pC/N along the [01-1] direction, respectively. This giant anisotropic piezostrain

provides a great opportunity to generate a large in-plane magnetic anisotropic field and achieve a 90° rotation of the easy axis as well as a large magnetization response to electric field

as shown in Fig. 1(a). Electric-field control of magnetization was carried out in a Magnetic Property Measurement System (MPMS) with _in situ_ electric fields and the detailed configuration

can be found in our previous report25. Routinely, the magnetic hysteresis loops were firstly measured along the [100] direction and the [01-1] direction with electric fields of 0 kV/cm, 10 

kV/cm and 20 kV/cm, respectively. The magnetization process of the sample along the [100] direction becomes harder and the remnant magnetization reduces when the electric field increases as

shown in Fig. 2(a). However, the situation along the [01-1] direction is just the converse, with an increment of the M-H squareness under large electric fields as shown in the inset of Fig.

2(b). These results can be understood by the anisotropic strain of the (011)-cut PMN-PT under electric fields as discussed above, which generates an in-plane magnetic anisotropic field in

CoFeB film. Since variable and large magnetic fields are not favorable for applications, investigation of directly electric-field control of magnetization with a fixed low magnetic field (H

= 5 Oe) was performed and the variations of magnetization with electric field along the two directions are shown in Figs. 2(c) and 2(d), respectively. The magnetization response to electric

field along the [100] direction exhibits a symmetrical _butterfly-like_ behavior, similar to that in the previous reports in other FM/FE heterostructure17,18. However, from the M-E curve as

shown in Fig. 2(c), one can see that the magnetization changes from above 1000 emu/cm3 to lower than 200 emu/cm3 with electric field changing from 0 kV/cm to 20 kV/cm and the relative

magnetization change [Δ_M_/_M(0)_] is up to 83%, which is much larger than the previous results, such as 25% reported in La0.7Sr0.3MnO3/PMN-PT17 and 6% reported in CoFe2O4/PMN-PT18. By

further optimizing the sample and reducing the bias magnetic field during the measurement, even larger Δ_M_/_M(0)_ of 90% can be achieved (see details in Figs. S2 and S3 of _Supplementary

Information_). This giant electrical modulation of magnetization originates from the combination of the ultra-high value of anisotropic in-plane piezoelectric coefficients of (011)-cut

PMN-PT23,24 and the perfect soft ferromagnetism without magnetocrystalline anisotropy of CoFeB film26. The M-E curve along the [01-1] direction also has a _butterfly-like_ shape but with an

opposite behavior compared to the curve along the [100] direction [Fig. 2(c)], i.e. electric field increases the magnetization from about 700 emu/cm3 to near 1100 emu/cm3 with Δ_M_/_M(0)_ ~

66% as shown in Fig. 2(d). Moreover, we can see that there are several data points jumping away from the regular _butterfly-like_ M-E curves, as masked by pink color and denoted by pink

arrows in Figs. 2(c) and 2(d). These _anomalous_ points are due to ferroelectric domain switching during the polarization reversal process (see details in Figs. S4 and S5 of _Supplementary

Information_) and can be eliminated in the unipolar case (see details in Fig. S6 of _Supplementary Information_). Considering the requirements of applications, the stability and

repeatability of the converse ME effect have also been investigated. The sample was loaded by step-changed electric fields of 0 kV/cm, 10 kV/cm and 20 kV/cm in sequence with H = 5 Oe and

stable, repeatable and remarkable high/middle/low triple magnetization states were realized as shown in Figs. 2(e) and 2(f) for the [100] and [01-1] directions, respectively. As expected,

the behavior along the [01-1] direction is reverse to that of the [100] direction and the high/low magnetization ratios in them are about 1000:200 and 1100:700, which agree with M-E curves

in magnitude as shown in Figs. 2(c) and 2(d) respectively. This should be very useful for the promising SME-RAMs8. In order to understand the electric-field control of magnetism and the

origin of the giant electrical modulation of magnetization in our CoFeB/PMN-PT structure, Rot-MOKE method27 with _in-situ_ electric fields was employed to investigate the magnetic anisotropy

tuned by electric fields. The basic configuration of the experiment is shown in Fig. 3(a) and the detailed process is described in the _Supplementary Information_ (Fig. S7). Since the

amorphous CoFeB has neither magnetocrystalline anisotropy nor induced magnetic anisotropy by external magnetic field during the fabrication, the initial state of the sample shows an in-plane

magnetic isotropy25. When a large electric field (_E_ = 17.5 kV/cm) was applied, a strong uniaxial magnetic anisotropy emerged with the easy axis along the [01-1] direction and a fitted

uniaxial magnetic anisotropy field _H__u_ = 125 Oe as revealed by the red torque curve in Fig. 3(b). However, after removing the electric field, a relative weak uniaxial magnetic anisotropy

appeared with the easy axis turning to the [100] direction and a fitted uniaxial magnetic anisotropy field _H__u_ = 53 Oe as revealed by the black torque curve in Fig. 3(b). The emergence of

a strong uniaxial magnetic anisotropy with the easy axis along the [01-1] direction at large electric fields can be attributed to the appearance of the giant in-plane anisotropic strain

under electric fields [Fig. 1(d)] and the positive magnetostriction coefficient (λ_S_ ~ 3 × 10−5) of the CoFeB film26, while the emergence of weak uniaxial magnetic anisotropy after removal

of electric field is unusual since the initial magnetic state of the sample showed an in-plane isotropy and it can be understood as follows. As CoFeB was deposited on top of unpoled PMN-PT

wafer, it shows an in-plane magnetic isotropy due to its amorphous nature and the randomness of ferroelectric domains in PMN-PT as shown in Fig. 1(c). After poling and removal of the

electric field, all of the eight possible polarizations degenerate into r1−/r2− as shown in Fig. 1(e). The transformation of r3/r4 to r1−/r2− results in a compressive strain along the [01-1]

direction and a tensile strain along the [100] direction, respectively. This anisotropic strain after poling induces a uniaxial magnetic anisotropy with easy axis along the [100] direction,

increases the remnant magnetization along the [100] direction (compare the M-H curves at first 0 kV/cm and 2nd 0 kV/cm in Fig. S2(b) of _Supplementary Information_) and makes the value of

magnetization at zero electric field along the [100] direction larger than that along the [01-1] direction [compare the values at zero electric field in Figs. 2(c) and 2(d)]. According to

theory27, the integration of magnetic torque moment _l_(φ) over angle φ (the angle between magnetization and easy axis) gives the ratio between uniaxial anisotropy energy and saturation

magnetization (_K__u_/_M__S_). Thus, the angle dependence of uniaxial anisotropy energy with electric field of 17.5 kV/cm on and off can be deduced as shown in Fig. 3(c) and one can

distinctly see a 90° rotation of the easy axis of the sample tuned by electric fields. To obtain the threshold electric field for rotation of the easy axis and the change of the induced

uniaxial magnetic anisotropy field with electric field, magnetic torque measurement was carried out under a series of electric fields and different torque curves were obtained (see details

in Fig. S7(d) of _Supplementary Information_). Fitting all the torque curves under different electric fields, magnetic anisotropy variation of the sample with electric field was obtained and

the fitted values of uniaxial magnetic anisotropy field (_H__u_) as well as the deduced orientations of easy axis (φ_0_) are shown in Fig. 3(d). It reveals that the value of uniaxial

magnetic anisotropy changes almost linearly from −53 Oe at zero electric field to about 130 Oe at _E_ = ±17.5 kV/cm and the direction of the easy axis stays along the [100] direction for

electric fields below 5 kV/cm. However, the easy axis switches about 90° and lies along the [01-1] direction for electric fields above 5 kV/cm. The situation of the negative branch is almost

the same, with a sharper easy axis switching process. Since the diameter of the light spot in the MOKE measurement is only 0.2 mm, we can also use it to investigate the electrical

modulation of magnetization, which reveals the information of a local region near the sample surface instead of the bulk. These surface and local results as revealed by MOKE measurement

(Figure S8 of _Supplementary Information_) are similar to those of bulk as revealed by MPMS measurement (Figure 2). Utilizing this giant electrical modulation of magnetization, especially

the electric-field controlled 90° rotation of the magnetic easy axis, a method of reversible and deterministic magnetization reversal controlled by pulsed electric fields and assisted with a

weak magnetic field was demonstrated. One period of the manipulation is shown in Fig. 4. Firstly, the CoFeB film was magnetized by a large negative magnetic field and then the magnetization

was measured at −5 Oe without electric field as denoted by stage I in Figs. 4(a) and 4(b). According to the previous discussions, the PMN-PT wafer is in a polarization state with r1−/r2−

dominant when the electric field is off and the induced easy axis of magnetization is along the [100] direction as shown in the upper part of Fig. 4(c). In this situation, the magnetization

is stable since magnetization, easy axis and external magnetic field are along the same direction (i.e. [100] direction) as shown in stage I of Fig. 4(d). Then, the magnetic field was

switched to +5 Oe as denoted by stage II in Figs. 4(a) and 4(b). Since the coercive field of CoFeB is a little bit larger than 5 Oe, the +5 Oe magnetic field is not strong enough to switch

the negative magnetization to the positive direction and it only exhibits a minor change as shown in stage II of Fig. 4(b). However, this configuration is metastable because magnetization is

antiparallel to the external magnetic field as shown in stage II of Fig. 4(d). Afterwards, a 20 kV/cm electric field was applied on the sample, resulting in a large in-plane anisotropic

strain and rotation of the easy axis of magnetization to the [01-1] direction as shown in the lower part of Fig. 4(c). This sudden change of easy axis broke the metastable state in stage II

and the negatively aligned magnetization began to rotate towards the positive direction as shown in Fig. 4(d). Afterwards, the electric field was turn off and the PMN-PT wafer changed back

to r1−/r2− dominant state, which rotated the easy axis of magnetization back to the [100] direction as shown in the upper part of Fig. 4(c), leading to another stable state with

magnetization, easy axis and external magnetic field along the same direction as shown in stage III of Fig. 4(d) and a large positive magnetization state as shown in stage III of Figs. 4(a)

and 4(b). Similar processes were taken by switching the magnetic field to −5 Oe [stage IV in Figs. 4(a), 4(b) and 4(d)], followed by another pulsed electric field and similar behavior was

observed as the previous case with magnetization switched to the negative direction as shown in Fig. 4(b). This magnetization reversal process, controlled by pulsed electric fields and

assisted with a weak magnetic field, is repeatable, holding promise for applications in the novel multifunctional devices. DISCUSSION Regarding the electric-field-controlled magnetization

reversal, the magnetoelectric Cr2O3 has also played an important role in the vertical exchange coupling system. Via magnetoelectric field cooling, magnetoelectric switching of exchange bias

can be achieved in a magnetoelectric Cr2O3(111)/(Co/Pt)3 heterostructure28, which has been proposed and designed as voltage controlled spintronic devices assisted with local heating29. Under

sufficient large field product _E·H_, isothermal electric control of exchange bias can also be achieved at room temperature30, with promising applications. Compared with the vertical

exchange coupling Cr2O3 system with magnetization switched up/down, the strain-mediated electrical modulation of magnetization as reported here is operated with magnetization rotated in

plane, which is highly relevant to the proposed SME-RAMs8 and helpful for further realizing electric-writing magnetic-reading spintronic devices related to CoFeB21. Besides, the operation

electric field in the CoFeB/PMN-PT structure is relatively low and can be further reduced by optimizing the strain transfer efficiencies (see details in Fig. S9 of _Supplementary

Information_), which is important for energy efficient magnetic-electric devices. In summary, giant electrical modulation of magnetization at room temperature is reported in a

heterostructure composed of amorphous ferromagnetic Co40Fe40B20 and (011)-cut Pb(Mg1/3Nb2/3)0.7 Ti0.3O3 with a maximum relative magnetization change up to 83%. Rot-MOKE measurement

demonstrated a 90° rotation of the easy axis above 5 kV/cm due to the electric field induced in-plane strain anisotropy related to ferroelectric polarization reorientation, which leads to

the giant modulation of magnetization. With the assistance of a weak magnetic field, reversible and deterministic magnetization reversal controlled by pulsed electric fields has been

achieved, holding promising applications for the novel multifunctional devices. METHODS Amorphous Co40Fe40B20 films with a thickness of 20 nm were deposited on one-side-polished (011)

oriented Pb(Mg1/3Nb2/3)0.7Ti0.3O3 substrates with a size of 3 × 2.5 × 0.2 mm3, followed by sputtering of 10 nm tantalum (Ta) using an ultra-high vacuum (ULVAC) magnetron sputtering system

with a base pressure of 1 × 10−6 Pa. Au layer with a thickness of 300 nm was sputtered on the bottom side of the FM/FE structure as electrode. The M-H, M-E and M-time curves of the sample

were measured by using a MPMS with _in situ_ electric fields applied across the FM-FE structure using a high voltage source-meter. The electric field pointing from the CoFeB film to the

bottom of PMN-PT substrate was defined as the positive electric field and an ammeter together with a 16 MΩ protecting resistor were series-wound in the circuit to monitor the current during

all the measurements performed at room temperature. The sample was firstly magnetized with 1000 Oe before the M-E and M-time measurements along the [001] and [01-1] directions, respectively.

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temperature. Nat. Mater. 9, 579–585 (2010). Article  ADS  CAS  Google Scholar  Download references ACKNOWLEDGEMENTS This work was supported by the 973 project of the Ministry of Science and

Technology of China (Grant Nos. 2009CB929202 and 2009CB929203), National Nature Science Foundation of China (Grant No. 10721404 and 11304385), Special Fund of Tsinghua for basic research

(Grant No. 201110810625). Research Project of National University of Defense Technology (Grant No. JC13-02-12), Tsinghua National Laboratory for Information Science and Technology (TNList)

Cross-discipline Foundation. AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing,

100084, P.R. China Sen Zhang, Yonggang Zhao, Lifeng Yang, Peisen Li, Jiawei Wang, Meihong Zhu & Huiyun Zhang * College of Science, National University of Defense Technology, Changsha,

410073, P.R. China Sen Zhang * Collaborative Innovation Center of Quantum Matter, Beijing, 100084, P.R. China Yonggang Zhao * Department of Physics, State Key Laboratory of Surface Physics

and Advanced Materials Laboratory, Fudan University, Shanghai, 200433, P.R. China Xia Xiao, Yizheng Wu & Xiaofeng Jin * Beijing National Laboratory for Condensed Matter Physics, Chinese

Academy of Sciences, Beijing, 100190, P.R. China Syed Rizwan & Xiufeng Han Authors * Sen Zhang View author publications You can also search for this author inPubMed Google Scholar *

Yonggang Zhao View author publications You can also search for this author inPubMed Google Scholar * Xia Xiao View author publications You can also search for this author inPubMed Google

Scholar * Yizheng Wu View author publications You can also search for this author inPubMed Google Scholar * Syed Rizwan View author publications You can also search for this author inPubMed 

Google Scholar * Lifeng Yang View author publications You can also search for this author inPubMed Google Scholar * Peisen Li View author publications You can also search for this author

inPubMed Google Scholar * Jiawei Wang View author publications You can also search for this author inPubMed Google Scholar * Meihong Zhu View author publications You can also search for this

author inPubMed Google Scholar * Huiyun Zhang View author publications You can also search for this author inPubMed Google Scholar * Xiaofeng Jin View author publications You can also

search for this author inPubMed Google Scholar * Xiufeng Han View author publications You can also search for this author inPubMed Google Scholar CONTRIBUTIONS S.Z. designed the multiferroic

structure and performed the experiments. Y.G.Z. directed the research. X.X. and Y.Z.W. carried out the MOKE measurements and analyzed the MOKE data. S.R. grew the CoFeB film. L.F.Y., P.S.L.

and J.W.W. assisted in the measurements of magnetic property. S.Z. and Y.G.Z. prepared the manuscript and refined the paper. M.H.Z., H.Y.Z., X.F.J. and X.F.H. supervised the experiments and

made scientific comment on the manuscript. All authors discussed the results and contributed to the refinement of the paper. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no

competing financial interests. ELECTRONIC SUPPLEMENTARY MATERIAL SUPPLEMENTARY INFORMATION Giant electrical modulation of magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011)

heterostructure RIGHTS AND PERMISSIONS This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported License. To view a copy of this license, visit

http://creativecommons.org/licenses/by-nc-sa/3.0/ Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Zhang, S., Zhao, Y., Xiao, X. _et al._ Giant electrical modulation of

magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) heterostructure. _Sci Rep_ 4, 3727 (2014). https://doi.org/10.1038/srep03727 Download citation * Received: 12 November 2013 *

Accepted: 18 December 2013 * Published: 16 January 2014 * DOI: https://doi.org/10.1038/srep03727 SHARE THIS ARTICLE Anyone you share the following link with will be able to read this

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