Integrated optical memristors | Nature Photonics

ABSTRACT Memristors in electronics have shown the potential for a range of applications, ranging from circuit elements to neuromorphic computing. In recent years, the ability to vary the

conductance of a channel in electronics has enabled in-memory computing, thus leading to substantial interest in memristors. Optical analogues will require modulation of the transmission of

light in a semicontinuous and nonvolatile manner. With the proliferation of photonic computing, such an optical analogue, which involves modulating the optical response in integrated

circuits while maintaining the modulated state afterwards, is being pursued using a range of functional materials. Here we review recent progress in this important and emerging aspect of

photonic integrated circuits and provide an overview of the current state of the art. Optical memristors are of particular interest for applications in high-bandwidth neuromorphic computing,

machine learning hardware and artificial intelligence, as these optical analogues of memristors allow for technology that combines the ultrafast, high-bandwidth communication of optics with

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SIMILAR CONTENT BEING VIEWED BY OTHERS EXPERIMENTAL PHOTONIC QUANTUM MEMRISTOR Article Open access 24 March 2022 ATOMIC SCALE MEMRISTIVE PHOTON SOURCE Article Open access 29 March 2022

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references ACKNOWLEDGEMENTS We are grateful to C. Lian and S. Rahimi Kari for assistance in preparing this manuscript. This work was supported in part by the US National Science Foundation

under grants nos. ECCS-2028624, ECCS-2210168/2210169, DMR-2003325, ECCS-2132929 and CISE-2105972. N.Y. acknowledges support from the University of Pittsburgh Momentum Fund. C.R. acknowledges

support from the Minta Martin Foundation through the University of Maryland. This work was supported by the European Union’s Horizon 2020 research and innovation programme (grant no.

101017237, PHOENICS Project) and the European Union’s Innovation Council Pathfinder programme (grant no. 101046878, HYBRAIN Project), as well as by EPSRC grants nos. EP/R001677/1,

EP/M015173/1 and EP/J018694/1. A broad statement on the sustainability of materials and/or the technology described here is briefed (not peer-reviewed) at the authors’ discretion at

https://nanoeng.materials.ox.ac.uk/sustainability. We acknowledge funding support by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany´s Excellence Strategy

EXC 2181/1 – 390900948 (the Heidelberg STRUCTURES Excellence Cluster) and CRC 1459. AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * Department of Electrical & Computer Engineering,

University of Pittsburgh, Pittsburgh, PA, USA Nathan Youngblood * Department of Materials Science & Engineering, University of Maryland, College Park, MD, USA Carlos A. Ríos Ocampo *

Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, MD, USA Carlos A. Ríos Ocampo * Kirchhoff-Institute for Physics, Heidelberg University,

Heidelberg, Germany Wolfram H. P. Pernice * Department of Materials, University of Oxford, Oxford, UK Harish Bhaskaran Authors * Nathan Youngblood View author publications You can also

search for this author inPubMed Google Scholar * Carlos A. Ríos Ocampo View author publications You can also search for this author inPubMed Google Scholar * Wolfram H. P. Pernice View

author publications You can also search for this author inPubMed Google Scholar * Harish Bhaskaran View author publications You can also search for this author inPubMed Google Scholar

CORRESPONDING AUTHOR Correspondence to Harish Bhaskaran. ETHICS DECLARATIONS COMPETING INTERESTS W.P. and H.B. hold shares in Salience Labs Ltd. All authors have patents and patent

applications in photonic devices. The authors declare that they have taken steps to ensure that these competing interests have not influenced the manuscript in any way. PEER REVIEW PEER

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Ocampo, C.A., Pernice, W.H.P. _et al._ Integrated optical memristors. _Nat. Photon._ 17, 561–572 (2023). https://doi.org/10.1038/s41566-023-01217-w Download citation * Received: 28 September

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