Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on zno

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Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on zno"


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ABSTRACT Since the successful demonstration of a blue light-emitting diode (LED)1, potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing


interest as the demands for display, illumination and information storage grow2,3,4. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by


efficient excitonic lasing on optical excitation5,6. Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus7,8,9,10, and even p–n junctions11,12,13.


However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate14. If ZnO is ever to produce long-lasting and robust devices,


the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors15. Here we report high-quality undoped films with electron mobility exceeding


that in the bulk. We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p–i–n junctions is demonstrated at room-temperature.


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support SIMILAR CONTENT BEING VIEWED BY OTHERS LIGHT-TRIGGERED REGIONALLY CONTROLLED N-DOPING OF ORGANIC SEMICONDUCTORS Article 28 May 2025 OPERANDO ZNO RECRYSTALLIZATION FOR EFFICIENT


QUANTUM-DOT LIGHT-EMITTING DIODES Article Open access 15 May 2025 RECONFIGURABLE PHOTO-INDUCED DOPING OF TWO-DIMENSIONAL VAN DER WAALS SEMICONDUCTORS USING DIFFERENT PHOTON ENERGIES Article


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Scholar  Download references ACKNOWLEDGEMENTS We thank T. Ohnishi and M. Lippmaa for measurement of coaxial impact-collision ion scattering spectroscopy. This work was supported by MEXT


Grant of Creative Scientific Research 14GS0204, MEXT Grant-in-Aid for Young Scientists 15685011, the Asahi Glass Foundation, and the inter-university cooperative program of the IMR. A.T. is


supported by a JSPS fellowship and S.F.C. is supported by the MEXT-COE21 program. AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * Institute for Materials Research, Tohoku University, Sendai,


980-8577, Japan Atsushi Tsukazaki, Akira Ohtomo, Makoto Ohtani & Masashi Kawasaki * Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba,


Tsukuba, 305-8573, Japan Takeyoshi Onuma & Shigefusa F. Chichibu * Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), Sendai, 980-0845, Japan


Takayuki Makino, Shigefusa F. Chichibu & Yusaburou Segawa * Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu, 432-8561, Japan Masatomo Sumiya & 


Syunrou Fuke * Research Institute of Electrical Communication, Tohoku University, Sendai, 980-8577, Japan Keita Ohtani & Hideo Ohno * Materials and Structures Laboratory, Tokyo Institute


of Technology, Yokohama, 226-8503, Japan Hideomi Koinuma * Combinatorial Material Science and Technology (COMET), Tsukuba, 305-0044, Japan Hideomi Koinuma & Masashi Kawasaki Authors *


Atsushi Tsukazaki View author publications You can also search for this author inPubMed Google Scholar * Akira Ohtomo View author publications You can also search for this author inPubMed 


Google Scholar * Takeyoshi Onuma View author publications You can also search for this author inPubMed Google Scholar * Makoto Ohtani View author publications You can also search for this


author inPubMed Google Scholar * Takayuki Makino View author publications You can also search for this author inPubMed Google Scholar * Masatomo Sumiya View author publications You can also


search for this author inPubMed Google Scholar * Keita Ohtani View author publications You can also search for this author inPubMed Google Scholar * Shigefusa F. Chichibu View author


publications You can also search for this author inPubMed Google Scholar * Syunrou Fuke View author publications You can also search for this author inPubMed Google Scholar * Yusaburou


Segawa View author publications You can also search for this author inPubMed Google Scholar * Hideo Ohno View author publications You can also search for this author inPubMed Google Scholar


* Hideomi Koinuma View author publications You can also search for this author inPubMed Google Scholar * Masashi Kawasaki View author publications You can also search for this author


inPubMed Google Scholar CORRESPONDING AUTHOR Correspondence to Masashi Kawasaki. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing financial interests. RIGHTS AND


PERMISSIONS Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Tsukazaki, A., Ohtomo, A., Onuma, T. _et al._ Repeated temperature modulation epitaxy for p-type doping and


light-emitting diode based on ZnO. _Nature Mater_ 4, 42–46 (2005). https://doi.org/10.1038/nmat1284 Download citation * Received: 28 June 2004 * Accepted: 27 September 2004 * Published: 19


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